NTE4151PT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTE4151PT1G
Datasheet:
Description:
MOSFETs SC-89-3 SMD/SMT P-Channel number of channels:1 313 mW -20 V Continuous Drain Current (ID):760 mA 2.1 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 1.6764 mm |
| Width | 950 µm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 260 mΩ |
| Height | 800 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Current Rating | -760 mA |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 313 mW |
| Power Dissipation | 313 mW |
| Number of Channels | 1 |
| Input capacitance | 156 pF |
| Continuous Drain Current (ID) | 760 mA |
| Rds On Max | 360 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 29 ns |
| Element Configuration | Single |
| Rise Time | 8.2 ns |
| Gate Charge | 2.1 nC |
| Drain to Source Resistance | 260 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 6 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 27685
Distributors
pcbx
pcbxUnit Price$0.11285
Ext.Price$0.11285
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.11285 | $0.11285 |
| 10 | $0.07506 | $0.75060 |
| 50 | $0.06783 | $3.39150 |
| 100 | $0.06130 | $6.13000 |
| 500 | $0.05942 | $29.71000 |
| 1000 | $0.05882 | $58.82000 |
| 3000 | $0.05566 | $166.98000 |
| 5000 | $0.05010 | $250.50000 |